NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N4124 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4126 • Low Collector to Emitter Saturation Voltage

NPN EPITAXIAL PLANAR TRANSISTOR

Description\nThe H2N4124 is designed for general purpose switching and amplifier applications. • Complementary to H2N4126\n• Low Collector to Emitter Saturation Voltage;

NPN SMALL SIGNAL TRANSISTOR

FEATURES For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

NPN general purpose transistor

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4126. FEATURES • Low current (max. 200 mA) • Low voltage (max. 25 V). APPLICATIONS • General purpose switching and amplification, e.g. small-signal audio-frequency applications.

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO = 25V • Collector Dissipation: PC (max) = 625mW