P-Channel Enhancement-Mode MOSFET (-20V, -4.5A)

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Low Voltage MOSFET

包装：卷带（TR） 描述：XFRMR MODUL 2PORT POE 1:1 10/100 变压器 脉冲变压器

MDL,DUAL,100P,1:1,SMT,TU, NPB

Star Magnetics??10/100BASE-T Transformer Modules with PoE* Option and 1:1 Turns Ratios

文件：866.93 Kbytes Page：6 Pages

MDL,DUAL,100P,1:1,SM,OH

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Star Magnetics??10/100BASE-T Transformer Modules with PoE* Option and 1:1 Turns Ratios

文件：969.05 Kbytes Page：6 Pages

包装：卷带（TR） 描述：XFRMR MODUL 2PORT POE 1:1 10/100 变压器 脉冲变压器

MDL,DUAL,100P,1:1,SMT,TR, NPB

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

丝印代码：A5***；P-Channel 1.25-W, 1.8-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

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PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages