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型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:H20N50F;500V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

HUIXIN

慧芯电子

丝印代码:H20N50P;500V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

HUIXIN

慧芯电子

丝印代码:H20N50W;500V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

HUIXIN

慧芯电子

丝印代码:H20N65F;650V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

HUIXIN

慧芯电子

丝印代码:H20N65T;650V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

HUIXIN

慧芯电子

丝印代码:H20N65W;650V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

HUIXIN

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丝印代码:H20N50ANB;500V N-Channel Planar MOSFET

Features RDSON=0.17Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73.4nC) Low Crss (typical 4.8pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)

SY

顺烨电子

丝印代码:H20N50ANF;500V N-Channel Planar MOSFET

Features RDSON=0.17Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73.4nC) Low Crss (typical 4.8pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)

SY

顺烨电子

丝印代码:H20N50ANV;500V N-Channel Planar MOSFET

Features RDSON=0.17Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73.4nC) Low Crss (typical 4.8pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)

SY

顺烨电子

丝印代码:H20N50ANW;500V N-Channel Planar MOSFET

Features RDSON=0.17Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73.4nC) Low Crss (typical 4.8pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)

SY

顺烨电子

丝印代码:H20N65ANF;650V N-Channel Planar MOSFET

Features RDSON≤0.42Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73nC) Low Crss (typical 12pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) (P

SY

顺烨电子

丝印代码:H20N65ANP;650V N-Channel Planar MOSFET

Features RDSON≤0.42Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73nC) Low Crss (typical 12pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) (P

SY

顺烨电子

丝印代码:H20N65ANV;650V N-Channel Planar MOSFET

Features RDSON≤0.42Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73nC) Low Crss (typical 12pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) (P

SY

顺烨电子

丝印代码:H20N65ANW;650V N-Channel Planar MOSFET

Features RDSON≤0.42Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73nC) Low Crss (typical 12pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) (P

SY

顺烨电子

100V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Managment • Load Switch

HUIXIN

慧芯电子

200V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Managment • Load Switch

HUIXIN

慧芯电子

Dual N-Channel Enhancement Mode MOSFET

Features • Surface-mounted package • Halogen Free , RoHS compliant Applications • Load Switch • Power Management

HUIXIN

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6.0mm x 3.5 mm x1.2mm Ceramic Package

文件:87.49 Kbytes Page:1 Pages

MMD

6.0mm x 3.5 mm x1.2mm Ceramic Package

文件:87.49 Kbytes Page:1 Pages

MMD

6.0mm x 3.5 mm x1.2mm Ceramic Package

文件:87.49 Kbytes Page:1 Pages

MMD

6.0mm x 3.5 mm x1.2mm Ceramic Package

文件:87.49 Kbytes Page:1 Pages

MMD

6.0mm x 3.5 mm x1.2mm Ceramic Package

文件:87.49 Kbytes Page:1 Pages

MMD

6.0mm x 3.5 mm x1.2mm Ceramic Package

文件:87.49 Kbytes Page:1 Pages

MMD

H20N产品属性

  • 类型

    描述

  • 型号

    H20N

  • 制造商

    MMD

  • 制造商全称

    MMD Components

  • 功能描述

    6.0mm x 3.5 mm x1.2mm Ceramic Package

更新时间:2026-3-18 9:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HRMICRO/华瑞微
24+
TO-220F
35000
原装正品保障优势供应

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