NPN SILICON TRANSISTOR

AUDIO MUTING APPLICATION.

通用晶体管

包装：托盘 描述：PULSE XFMR 1CT:1CT TX 1CT:1CT RX 变压器 脉冲变压器

MDL,SIN,100D,1:1,SM,TU

文件：454.42 Kbytes Page：3 Pages

MDL,SIN,100D,1:1,SMT,TR, NPB

包装：管件 描述：PULSE XFMR 1CT:1CT TX 1CT:1CT RX 变压器 脉冲变压器

10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS

文件：103.41 Kbytes Page：3 Pages

MDL,SIN,100D,1:1,SMT

文件：348 Kbytes Page：3 Pages

MDL,SIN,100D,1:1,SMT,TU, NPB

RoHS peak reflow temperature rating: 245C

文件：526.24 Kbytes Page：3 Pages

10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS

文件：211.64 Kbytes Page：3 Pages

10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS

文件：103.41 Kbytes Page：3 Pages

10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS

文件：103.41 Kbytes Page：3 Pages

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — Hi

MEDIUM POWER AMPLIFIER GaAs MMIC

文件：452.7 Kbytes Page：8 Pages