High Voltage Photodarlington Optocouplers

General Description The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an inte gral base-emitter resistor to optimize elevated tempera t

封装/外壳：6-SMD，鸥翼 包装：散装 描述：OPTOISO 4.17KV DARL W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

封装/外壳：6-SMD，鸥翼 包装：卷带（TR） 描述：OPTOISO 4.17KV DARL W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)

The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base–emitter resistors. The on–chip resistors improve higher temperature leakage characteristics. Designed with high isolation, high CTR, high voltage and

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteri

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteri

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteri

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPERS

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