HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteri

封装/外壳：6-SMD，鸥翼 包装：管件 描述：OPTOISO 5.3KV DARL W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)

The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base–emitter resistors. The on–chip resistors improve higher temperature leakage characteristics. Designed with high isolation, high CTR, high voltage and

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteri

HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR

DESCRIPTION The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 6pin dual in l

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

[GENERAL INSTRUMENT] DESCRIPTION The MCA11G1 and MCA11G2 are the photodarlington-type optically coupled optocouplers. Both devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize e

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPERS

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