| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H113E | Low Cost, 1W, Ultra-Miniature DC/DC Converters 文件:210.78 Kbytes Page:2 Pages | MPD | ||
H100EI SERIES 文件:229.45 Kbytes Page:2 Pages | MPD | |||
Low Cost, 1W High 3 kVDC Isolation DC/DC Converters | MPD | |||
PNP SILICON BIAS RESISTOR TRANSISTOR This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The | ONSEMI 安森美半导体 | |||
0.25關m Sea of Gates and Customer Structured Arrays DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | |||
6-Pin DIP Optoisolators Darlington Output 6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents | MOTOROLA 摩托罗拉 | |||
Reference Diode 文件:126.55 Kbytes Page:4 Pages | NSC 国半 | |||
Reference Diode 文件:126.55 Kbytes Page:4 Pages | NSC 国半 |
H113E产品属性
- 类型
描述
- Output V:
9.0 VDC
- Output I:
111 mA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MPD |
25+ |
DIP |
55000 |
原厂渠道原装正品假一赔十 |
|||
UPD |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
UPD |
2607+ |
全新-电源模块 |
10238 |
UPD电源模块H113E交期短价格好#即刻询购立享优惠#长期有排单订 |
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DdatasheetPDF页码索引
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