10/100 BASE-T SINGLE PORT TRANSFORMER MODULES

[Pulse] • Compatible with Broadcom, ICS, Intel, Kendin, Lucent, National Semiconductor and TDK Transceivers • Meets all IEEE 802.3 and ANSI X3.263 standards including 350 µH OCL with 8 mA bias • IC grade transfer-molded package withstands 235°C IR reflow • Patented Interlock Base construction

LAN DISCRETE TRANSFORMER MODULES

文件：261.829 Kbytes Page：12 Pages

10/100 base -t single port TRANSFORMER MODULES

文件：527.31 Kbytes Page：5 Pages

包装：卷带（TR） 描述：XFRMR MODULE 1PORT 1:1 10/100 变压器 脉冲变压器

10/100 BASE-T SINGLE PORT TRANSFORMER MODULES With 1:1 Transmit Turns Ratios

文件：482.2 Kbytes Page：5 Pages

10/100 BASE-T SINGLE PORT TRANSFORMER MODULES

文件：482.2 Kbytes Page：5 Pages

10/100 BASE-T SINGLE PORT TRANSFORMER MODULES

文件：482.2 Kbytes Page：5 Pages

网口变压器

包装：卷带（TR） 描述：XFRMR MODULE 1PORT 1:1 10/100 变压器 脉冲变压器

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019AM BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019M BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

METAL GATE RF SILICON FET

文件：37.52 Kbytes Page：4 Pages

METAL GATE RF SILICON FET

文件：37.52 Kbytes Page：4 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：38.1 Kbytes Page：2 Pages