位置:GS88218BGB-250V > GS88218BGB-250V详情

GS88218BGB-250V中文资料

厂家型号

GS88218BGB-250V

文件大小

1430.44Kbytes

页面数量

35

功能描述

512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs

数据手册

下载地址一下载地址二到原厂下载

生产厂商

GSI

GS88218BGB-250V数据手册规格书PDF详情

Functional Description

Applications

The GS88218/36B(B/D)-xxxV is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features

• FT pin for user-configurable flow through or pipeline operation

• Single/Dual Cycle Deselect selectable

• IEEE 1149.1 JTAG-compatible Boundary Scan

• On-chip read parity checking; even or odd selectable

• ZQ mode pin for user-selectable high/low output drive

• 1.8 V or 2.5 V core power supply

• 1.8 V or 2.5 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to SCD x18/x36 Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 119- and 165-bump BGA packages

• RoHS-compliant packages available