位置:GS88118BD-300I > GS88118BD-300I详情
GS88118BD-300I中文资料
GS88118BD-300I数据手册规格书PDF详情
Functional Description
Applications
The GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D) is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Features
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10/–10 core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP and 165-bump BGA packages
• RoHS-compliant 100-lead TQFP and 165-bump BGA packages available
GS88118BD-300I产品属性
- 类型
描述
- 型号
GS88118BD-300I
- 制造商
GSI
- 制造商全称
GSI Technology
- 功能描述
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88118BD-300I 资料下载更多...
GS88118BD-300I 芯片相关型号
- 2403-6212TB
- 2404-6212TB
- 3415-0000
- 3417-6000
- 3463-0000
- 3485-1700F
- 3485-2500F
- 74LVX373MX
- CLC453ALC
- CNS471A5
- GS816132BGD-150V
- GS816218BGD-200I
- GS816218BGD-250I
- GS816236BGD-150I
- GS816236BGD-200
- GS816236BGD-250I
- GS816236D-133I
- GS832018GT-133V
- GS832018GT-150V
- GS832118GE-166V
- GS832118GE-200V
- GS832132E-133I
- GS832418B-225
- GS864018GT-167I
- GS864018GT-167IV
- GS864272GC-167V
- GS864436E-250V
- GS88118BD-200I
- GS88132BD-333I
- GS88136BGD-200IV
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
GSI Technology
GSI Technology是一家总部位于美国加利福尼亚州的半导体公司,成立于1995年。该公司专注于设计、开发和销售高性能半导体存储器解决方案,包括静态随机存储器(SRAM)和全定制存储器产品。 作为一家专注于存储器产品的半导体公司,GSI Technology致力于提供高性能、低功耗、高可靠性的解决方案,以满足客户对存储器器件的需求。公司的产品广泛应用于计算机、通信、消费电子、医疗和工业领域等不同行业。 GSI Technology在半导体存储器领域拥有丰富的经验和技术优势,致力于不断创新和产品改进。公司的产品组合包括高速、低功耗的静态随机存储器(SRAM)、全定制存储器和其他相关存储器产