位置:GS840E18AT-100I > GS840E18AT-100I详情

GS840E18AT-100I中文资料

厂家型号

GS840E18AT-100I

文件大小

762.28Kbytes

页面数量

31

功能描述

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

数据手册

下载地址一下载地址二到原厂下载

生产厂商

GSI

GS840E18AT-100I数据手册规格书PDF详情

Functional Description

Applications

The GS840E18/32/36A is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous SRAM with a 2- bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. The GS84018/32/36A is available in a JEDEC standard 100-lead TQFP or 119-Bump BGA package.

Features

• FT pin for user-configurable flow through or pipelined operation

• Dual Cycle Deselect (DCD) operation

• 3.3 V +10/–5 core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipelined mode

• Byte Write (BW) and/or Global Write (GW) operation

• Common data inputs and data outputs

• Clock control, registered, address, data, and control

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC standard 100-lead TQFP or 119-Bump BGA package

• Pb-Free 100-lead TQFP package available

GS840E18AT-100I产品属性

  • 类型

    描述

  • 型号

    GS840E18AT-100I

  • 制造商

    GSI

  • 制造商全称

    GSI Technology

  • 功能描述

    256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

更新时间:2025-10-30 16:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
GSI
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全新原装、诚信经营、公司现货销售