位置:GS84032B-150I > GS84032B-150I详情

GS84032B-150I中文资料

厂家型号

GS84032B-150I

文件大小

629.59Kbytes

页面数量

31

功能描述

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

数据手册

下载地址一下载地址二到原厂下载

生产厂商

GSI

GS84032B-150I数据手册规格书PDF详情

Features

• FT pin for user configurable flow through or pipelined operation.

• Single Cycle Deselect (SCD) Operation.

• 3.3V +10/-5 Core power supply

• 2.5V or 3.3V I/O supply.

• LBO pin for linear or interleaved burst mode.

• Internal input resistors on mode pins allow floating mode pins.

• Default to Interleaved Pipelined Mode.

• Byte write (BW) and/or global write (GW) operation.

• Common data inputs and data outputs.

• Clock Control, registered, address, data, and control.

• Internal Self-Timed Write cycle.

• Automatic power-down for portable applications.

• JEDEC standard 100-lead TQFP or 119 Bump BGA package.

Applications

The GS84018/32/36 is a 4,718,592 bit (4,194,304 bit for x32 version) high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. The GS84018/32/36 is available in a JEDEC standard 100-lead TQFP or 119 Bump BGA package.

更新时间:2025-10-30 15:13:00
供应商 型号 品牌 批号 封装 库存 备注 价格
GSI
14+
1218
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23+
NA
1218
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23+
QFP
7600
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GSI
25+
QFP
4500
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GSI
2016+
BGA
3000
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GSI
24+
BGA
36500
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22+
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12245
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