位置:GS84018T-166 > GS84018T-166详情
GS84018T-166中文资料
GS84018T-166数据手册规格书PDF详情
Features
• FT pin for user configurable flow through or pipelined operation.
• Single Cycle Deselect (SCD) Operation.
• 3.3V +10/-5 Core power supply
• 2.5V or 3.3V I/O supply.
• LBO pin for linear or interleaved burst mode.
• Internal input resistors on mode pins allow floating mode pins.
• Default to Interleaved Pipelined Mode.
• Byte write (BW) and/or global write (GW) operation.
• Common data inputs and data outputs.
• Clock Control, registered, address, data, and control.
• Internal Self-Timed Write cycle.
• Automatic power-down for portable applications.
• JEDEC standard 100-lead TQFP or 119 Bump BGA package.
Applications
The GS84018/32/36 is a 4,718,592 bit (4,194,304 bit for x32 version) high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. The GS84018/32/36 is available in a JEDEC standard 100-lead TQFP or 119 Bump BGA package.
GS84018T-166产品属性
- 类型
描述
- 型号
GS84018T-166
- 功能描述
x18 Fast Synchronous SRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GSI |
24+ |
TQFP |
6980 |
原装现货,可开13%税票 |
|||
GSI |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
GSI |
23+ |
BGA |
10 |
原装正品现货 |
|||
GSI |
23+ |
NA |
300 |
专做原装正品,假一罚百! |
|||
GSI |
三年内 |
1983 |
只做原装正品 |
||||
GSI |
24+ |
QFP |
35210 |
原装现货/放心购买 |
|||
GSI |
23+ |
QFP |
50000 |
全新原装正品现货,支持订货 |
|||
GSI |
0923+ |
QFP |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
GSI |
23+ |
QFP |
7300 |
专注配单,只做原装进口现货 |
|||
GSI |
21+ |
QFP |
10 |
原装现货假一赔十 |
GS84018T-166 资料下载更多...
GS84018T-166 芯片相关型号
- GS72116J-10I
- GS74104AGJ-10
- GS74108AJ-12I
- GS78108AGB-12I
- GS8320E32T-166I
- GS8320E32T-200I
- GS8321E32E-150V
- GS8321EV18GE-250I
- GS8321V18E-150
- GS8321V32GE-133
- GS8321Z18E-150V
- GS8322V36B-133I
- GS8322V36E-200I
- GS8322Z36E-200IV
- GS8322Z36E-250IV
- GS8322ZV36B-200I
- GS8342R36E-200I
- GS8342S08E-200I
- GS8342T36E-300I
- GS84118AT-150
- GS8642Z36GB-167
- GS8642ZV72GC-300
- GS8644ZV18B-250I
- GS8644ZV72C-133
- GS8662D18E-200I
- GS8662D18E-250I
- GS8662D18E-300I
- GS8662R18E-167
- GS8662T18E-167
- GS8662T18E-333I
Datasheet数据表PDF页码索引
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GSI Technology
GSI Technology是一家总部位于美国加利福尼亚州的半导体公司,成立于1995年。该公司专注于设计、开发和销售高性能半导体存储器解决方案,包括静态随机存储器(SRAM)和全定制存储器产品。 作为一家专注于存储器产品的半导体公司,GSI Technology致力于提供高性能、低功耗、高可靠性的解决方案,以满足客户对存储器器件的需求。公司的产品广泛应用于计算机、通信、消费电子、医疗和工业领域等不同行业。 GSI Technology在半导体存储器领域拥有丰富的经验和技术优势,致力于不断创新和产品改进。公司的产品组合包括高速、低功耗的静态随机存储器(SRAM)、全定制存储器和其他相关存储器产