位置:GS8322Z18B-200 > GS8322Z18B-200详情
GS8322Z18B-200中文资料
GS8322Z18B-200数据手册规格书PDF详情
Functional Description
The GS8322Z18/36/72 is a 36Mbit Synchronous Static SRAM. GSIs NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10/–10 core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-, 165- or 209-Bump BGA package
GS8322Z18B-200产品属性
- 类型
描述
- 型号
GS8322Z18B-200
- 制造商
GSI Technology
- 功能描述
SRAM SYNC DUAL 2.5V/3.3V 36MBIT 2MX18 7.5NS/3NS 119FBGA - Trays
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GSI |
15+ |
BGA |
2000 |
||||
GSI |
21+ |
BGA |
20000 |
只做原装,质量保证 |
|||
GSI |
2023+ |
BGA |
53500 |
正品,原装现货 |
|||
GSI |
2016+ |
BGA |
6528 |
只做进口原装现货!或者订货,假一赔十! |
|||
GSI |
23+ |
BGA |
19726 |
||||
GSI |
16+ |
NA |
8800 |
原装现货,货真价优 |
|||
GSI |
23+ |
TSOP |
5000 |
原装正品,假一罚十 |
|||
GSI |
2020+ |
N/A |
1452 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
GSI |
24+ |
TSOP |
1535 |
||||
GSI |
17+ |
BGA |
6200 |
100%原装正品现货 |
GS8322Z18B-200 资料下载更多...
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GSI Technology
GSI Technology是一家总部位于美国加利福尼亚州的半导体公司,成立于1995年。该公司专注于设计、开发和销售高性能半导体存储器解决方案,包括静态随机存储器(SRAM)和全定制存储器产品。 作为一家专注于存储器产品的半导体公司,GSI Technology致力于提供高性能、低功耗、高可靠性的解决方案,以满足客户对存储器器件的需求。公司的产品广泛应用于计算机、通信、消费电子、医疗和工业领域等不同行业。 GSI Technology在半导体存储器领域拥有丰富的经验和技术优势,致力于不断创新和产品改进。公司的产品组合包括高速、低功耗的静态随机存储器(SRAM)、全定制存储器和其他相关存储器产