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GS82612DT19CE-350MQ中文资料
GS82612DT19CE-350MQ数据手册规格书PDF详情
Features
• Aerospace-Level Product
• 2.0 clock Latency with DLL on
• 1.0 clock Latency with DLL off
• Optional DLL-controlled output timing
• Can be operated with DLL on or off
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) inputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump Ceramic Column Grid Array (CCGA) and
165-bump Land Grid Array (LGA) packages
Radiation Performance
• Total Ionizing Dose (TID) > 100krads(Si)
• Single Event Latchup Immunity > 77.3 MeV.cm2
/mg (125C)
SigmaQuad™ Family Overview
The GS82612DT19/37, GS81332DT19/37, and
GS8692DT19/37 are built in compliance with the SigmaQuadII+ SRAM pinout standard for Separate I/O synchronous
SRAMs. They are 301,989,888-bit (288Mb), 150,994,944-bit
(144Mb), and 75,497,472-bit (72Mb) SRAMs. These
SigmaQuad SRAMs are just one element in a family of low
power, low voltage HSTL I/O SRAMs designed to operate at
the speeds needed to implement economical high performance
networking systems.
Clocking and Addressing Schemes
The Rad-Hard SigmaQuad-II+ SRAMs are synchronous
devices. They employ two input register clock inputs, K and K.
K and K are independent single-ended clock inputs, not
differential inputs to a single differential clock input buffer.
Each internal read and write operation in a SigmaQuad-II+ B4
RAM is four times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaQuad-II+ B4 RAM is always two address pins
less than the advertised index depth (e.g., the 16M x 18 has a
4M addressable inde
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GSI |
23+ |
QFP |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
GSI |
23+ |
06+ |
6500 |
专注配单,只做原装进口现货 |
|||
GSI |
23+ |
06+ |
6500 |
专注配单,只做原装进口现货 |
|||
GSITECHNOLOGY |
2022+ |
72 |
只做原装,价格优惠,长期供货。 |
||||
GS |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
GlobalSpecialties |
新 |
5 |
全新原装 货期两周 |
||||
Global Specialties |
2022+ |
1 |
全新原装 货期两周 |
||||
05+ |
原厂原装 |
771 |
只做全新原装真实现货供应 |
||||
GS |
23+ |
3880 |
正品原装货价格低 |
||||
GS |
22+ |
PDIP |
12245 |
现货,原厂原装假一罚十! |
GS82612DT19CE-350MQ 资料下载更多...
GS82612DT19CE-350MQ 芯片相关型号
- 895-036-524-503
- 895-036-524-504
- 895-036-524-507
- 895-036-524-508
- 895-054-521-403
- 895-054-521-404
- 895-054-521-407
- 895-054-521-408
- 895-054-521-412
- 895-054-521-602
- 895-054-521-603
- 895-054-521-604
- 895-054-521-607
- 895-054-521-608
- 895-068-544-503
- 895-068-544-504
- 895-068-544-507
- 895-068-544-512
- 895-068-544-602
- 895-068-544-603
- 895-068-544-604
- 895-068-544-607
- 895-068-544-608
- GS82612DT19CE-250MV
- GS82612DT19CE-350MQ
- VX324-3.3CB-INMHZ-10
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GSI Technology
GSI Technology是一家总部位于美国加利福尼亚州的半导体公司,成立于1995年。该公司专注于设计、开发和销售高性能半导体存储器解决方案,包括静态随机存储器(SRAM)和全定制存储器产品。 作为一家专注于存储器产品的半导体公司,GSI Technology致力于提供高性能、低功耗、高可靠性的解决方案,以满足客户对存储器器件的需求。公司的产品广泛应用于计算机、通信、消费电子、医疗和工业领域等不同行业。 GSI Technology在半导体存储器领域拥有丰富的经验和技术优势,致力于不断创新和产品改进。公司的产品组合包括高速、低功耗的静态随机存储器(SRAM)、全定制存储器和其他相关存储器产