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GS816218BD-250中文资料

厂家型号

GS816218BD-250

文件大小

1462.81Kbytes

页面数量

37

功能描述

1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs

SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 5.5NS/2.5NS 165FBGA - Trays

数据手册

下载地址一下载地址二到原厂下载

生产厂商

GSI

GS816218BD-250数据手册规格书PDF详情

Functional Description

Applications

The GS816218/36BB is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features

• FT pin for user-configurable flow through or pipeline operation

• Single/Dual Cycle Deselect selectable

• IEEE 1149.1 JTAG-compatible Boundary Scan

• ZQ mode pin for user-selectable high/low output drive

• 2.5 V or 3.3 V +10/–10 core power supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to SCD x18/x36 Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 119-bump BGA package

GS816218BD-250产品属性

  • 类型

    描述

  • 型号

    GS816218BD-250

  • 制造商

    GSI Technology

  • 功能描述

    SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 5.5NS/2.5NS 165FBGA - Trays