Description

StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout

with planar stripe DMOS technology.

■ Extremely high dv/dt capability

■ Low Gate Charge Qg results in Simple Drive Requirement

■ 100 avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability