Features

•Highly reliable GE SiC MOSFET devices

•Low R DS(ON) (3.1 mΩ) (device only)

•Low stray inductance (1 nH )

•SiC die qualified to +200 C

•Ultra low switching losses over entire

operating range

•Body diode with minimal reverse

recovery

•Integrated temperature sensing

•Dedicated DESAT Pin and Source

Kelvin Pin

•AlSiC Baseplate and Si 3 N 4 AMB

Substrate