FEATURES

♦ For general purpose applications.

♦ This diode features low turn-on voltage.

The devices are protected by a PN

junction guard ring against excessive voltage,

such as electrostatic discharges.

♦ Metal-on-silicon Schottky barrier device which is

protected by a PN junction guard ring. The low

forward voltage drop and fast switching make it ideal

for protection of MOS devices, steering, biasing and

coupling diodes for fast switching and low logic level

applications.

♦ This diode is also available in the Mini-MELF case

with the type designation BAS86.

MECHANICAL DATA

Case: DO-35 Glass Case

Weight: approx. 0.13 g