Features

• AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)

• 650 V enhancement mode power transistor

• Bottom-cooled, low inductance GaNPX® package

• RDS(on) = 25 mΩ

• IDS(max) = 60 A

• Ultra-low FOM

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 / +10 V)

• Very high switching frequency (> 10 MHz)

• Fast and controllable fall and rise times

• Reverse conduction capability

• Zero reverse recovery loss

• Small 11 x 9 mm2 PCB footprint

• Dual gate pads for optimal board layout

• RoHS 3 (6+4) compliant

Applications

• On Board Chargers

• Traction Drive

• DC-DC Converters

• Industrial Motor Drives

• Solar Inverters

• Bridgeless Totem Pole PFC

Description

The GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-5-B-A is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.