Features

• 700 V enhancement mode power transistor

• 850 V transient drain-to-source voltage

• Bottom-cooled, 8x8 mm PDFN package

• RDS(on) = 37 mΩ

• IDS,max = 40 A / IDSmax,Pulse = 67 A

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 V / +10 V)

• High switching frequency (> 1 MHz)

• Fast and controllable fall and rise times

• Reverse conduction capability

• Zero reverse recovery loss

• Source Sense (SS) pin for optimized gate drive

• RoHS 3 (6+4) compliant

Applications

• Bridgeless Totem Pole PFC

• Consumer, Industrial and Datacenter High

Density Power Supply

• High Power Adapters

• LED Lighting Drivers

• Appliance and Industrial Motor Drives

• Solar Inverter

• Uninterruptable Power Supplies

• Laser Drivers

• Wireless Power Transfer

Description

The GS-065-030-6-LR is an enhancement mode

GaN-on-Silicon power transistor. The properties of

GaN allow for high current, high voltage breakdown

and high switching frequency. GaN Systems

innovates with industry leading advancements such

as patented Island Technology® cell layout which

realizes high-current die and high yield. The GS-065-

030-6-LR is a bottom-side cooled transistor that

offers low junction-to-case thermal resistance for

demanding high power applications. These features

combine to provide very high efficiency power

switching.