Features

• 650 V enhancement mode power transistor

• 850 V transient drain-to-source voltage

• Bottom-cooled, 8x8 mm PDFN package

• RDS(on) = 50 mΩ

• IDS,max = 30 A / IDSmax,Pulse = 60 A

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 V / +10 V)

• High switching frequency (> 1 MHz)

• Fast and controllable fall and rise times

• Reverse conduction capability

• Zero reverse recovery loss

• Source Sense (SS) pin for optimized gate drive

• RoHS 3 (6+4) compliant

Applications

• Bridgeless Totem Pole PFC

• Consumer, Industrial and Datacenter High

Density Power Supply

• High Power Adapters

• LED Lighting Drivers

• Appliance and Industrial Motor Drives

• Solar Inverter

• Uninterruptable Power Supplies

• Laser Drivers

• Wireless Power Transfer

Description

The GS-065-030-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-030-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.