Features

• 700 V enhancement mode power transistor

• 850 V transient drain-to-source voltage

• Bottom-cooled, small 5x6 mm PDFN package

• RDS(on) = 165 mΩ

• IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A

• Ultra-low FOM

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 V / +10 V)

• High switching frequency (> 1 MHz)

• Fast and controllable fall and rise times

• Reverse conduction capability

• Zero reverse recovery loss

• Source Sense (SS) pin for optimized gate drive

• RoHS 3 (6+4) compliant

Applications

• Power Adapters

• LED Lighting Drivers

• Fast Battery Charging

• Power Factor Correction

• Appliance Motor Drives

• Wireless Power Transfer

• Industrial Power Supplies

Description

The GS-065-008-6-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN

allow for high current, high voltage breakdown and

high switching frequency. GaN Systems innovates

with industry leading advancements such as

patented Island Technology® cell layout which

realizes high-current die and high yield. The GS065-008-6-L is a bottom-side cooled transistor that

offers very low junction-to-case thermal resistance

for demanding high power applications. These

features combine to provide very high efficiency

power switching.