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Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

STMICROELECTRONICS

意法半导体

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

STMICROELECTRONICS

意法半导体

60 A, 650 V field stop trench gate IGBT with very fast diode

文件:1.92588 Mbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件:1.57984 Mbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

60 A, 650 V field stop trench gate IGBT with Ultrafast diode

文件:2.06606 Mbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

更新时间:2025-11-5 16:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO247
24981
原装正品代理渠道价格优势
ST
24+
TO247-3
6000
全新原装深圳仓库现货有单必成
ST
23+
TO-247
20000
ST
24+
TO247-3
30000
原装正品公司现货,假一赔十!
ST/意法
24+
NA
40000
全新原装现货特价销售 欢迎来电查询
ST
21+
TO-247
3600
全新原装公司现货
ST
23+
NA
6800
原装正品,力挺实单
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
2526+
原厂封装
50000
15年芯片行业经验/只供原装正品:0755-83268930邹小姐
ST
24+
TO247
25836
新到现货,只做全新原装正品

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