650V /100A Trench Field Stop IGBT

FEATURES • High breakdown voltage up to 650V for improved reliability • Trench-Stop Technology offering : ➢ High speed switching ➢ High ruggedness, temperature stable ➢ Short circuit withstand time – 5s ➢ Low VCEsat ➢ Easy parallel switching capability due to positive temperature coefficie

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 34mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Power MOSFET

Description The RM100N65DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

650V/100mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power supply PV inverter Unint

N-Channel Enhancement Mode MOSFET

文件：234.56 Kbytes Page：4 Pages