TeSys Deca - auxiliary contact - 1 NO 1 NC

Main Range TeSys TeSys Deca Device short name GVAE Product or Component Type Auxiliary contact block Product Compatibility GV2L GV2ME GV3L GV2RT GV2P GV3P GV2LE LS1D323

TeSys GV2 & GV3 - auxiliary contact - 1 NO 1 NC

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辅助触点, 2个触点, 1 常闭 + 1 常开, 60 V dc, 240 V ac, 正面安装, GVAE系列

TeSys Deca - auxiliary contact - 1 NO 1 NC

Main Range TeSys TeSys Deca Device short name GVAE Product or Component Type Auxiliary contact block Product Compatibility GV2L GV2ME GV3L GV2RT GV2P GV3P GV2LE LS1D323

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages