TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 600V 30A 170W TO3PN 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Silicon N Channel IGBT High Power Switching Applications

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low