GT3价格

参考价格:¥0.6039

型号:GT3020/L2C-B45562C4CB2/2T 品牌:Everlight 备注:这里有GT3多少钱,2024年最近7天走势,今日出价,今日竞价,GT3批发/采购报价,GT3行情走势销售排行榜,GT3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
GT3

包装:盒 描述:HANDPIECE 120V 焊接,拆焊,返修产品 烙铁,镊子,手柄

XceliteApex Tool Group

顶点工具组

Xcelite

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Silicon N Channel IGBT

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

HighPowerSwitchingApplications FastSwitchingApplications •Fourth-generationIGBT •Enhancementmodetype •Fastswitching(FS):Operatingfrequencyupto50kHz(reference) Highspeed:tf=0.05μs(typ.) Lowswitchingloss:Eon=1.00mJ(typ.):Eoff=0.80mJ(typ.) •Low

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

High Power Switching Applications Fast Switching Applications

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

HighPowerSwitchingApplications FastSwitchingApplications •Fourth-generationIGBT •Enhancementmodetype •Fastswitching(FS):Operatingfrequencyupto50kHz(reference) Highspeed:tf=0.05μs(typ.) Lowswitchingloss:Eon=1.00mJ(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Discrete IGBTs Silicon N-Channel IGBT

1.Applications •MotorDrivers 2.Features (1)Sixthgeneration (2)Lowsaturationvoltage:VCE(sat)=1.5V(typ.)(IC=30A) (3)Highjunctiontemperature:Tj=175ㄹ°C(max) (4)FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

MALLORY

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

MALLORY

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

MALLORY

Antenna, Sensor, and Communications Trunk Line Connections

Features ●Availableinalow-profile(GT3)andastandard(GT3B)type. ●Splittypeusesamountingscrewholediameterof2.6mm. ●Tabwidthissize040.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

MALLORY

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

MALLORY

Interface Portions and In-line Portions of the Various Units and Devices

Features ●Stableharnessquality:“One-step”crimpingstructureofcenterandouterconductorsprovidesstableharnessquality. Operatorscancompleteharnessingwithouttouchingacenterconductor.Thus,ahighprecisionofcenterconductorpositioningcanbemaintainedirrespectiveofope

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

Antenna, Sensor, and Communications Trunk Line Connections

Features ●Availableinalow-profile(GT3)andastandard(GT3B)type. ●Splittypeusesamountingscrewholediameterof2.6mm. ●Tabwidthissize040.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

MALLORY

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

MALLORY

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

MALLORY

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

MALLORY

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheGT3585providethedesignerwithbestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheSOT-26packageisuniversallyusedforallcommercial-industrialsurfacemountapplications. Features *LowGateChange *LowOn-resistance *RoHSCompliant

GTM

勤益投資控股股份有限公司

GTM

Fourth-generation IGBT Current Resonance Inverter Switching Applications

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

Antenna, Sensor, and Communications Trunk Line Connections

Features ●Availableinalow-profile(GT3)andastandard(GT3B)type. ●Splittypeusesamountingscrewholediameterof2.6mm. ●Tabwidthissize040.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

Antenna, Sensor, and Communications Trunk Line Connections

Features ●Availableinalow-profile(GT3)andastandard(GT3B)type. ●Splittypeusesamountingscrewholediameterof2.6mm. ●Tabwidthissize040.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

Antenna, Sensor, and Communications Trunk Line Connections

Features ●Availableinalow-profile(GT3)andastandard(GT3B)type. ●Splittypeusesamountingscrewholediameterof2.6mm. ●Tabwidthissize040.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

Antenna, Sensor, and Communications Trunk Line Connections

Features ●Availableinalow-profile(GT3)andastandard(GT3B)type. ●Splittypeusesamountingscrewholediameterof2.6mm. ●Tabwidthissize040.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

Antenna, Sensor, and Communications Trunk Line Connections

Features ●Availableinalow-profile(GT3)andastandard(GT3B)type. ●Splittypeusesamountingscrewholediameterof2.6mm. ●Tabwidthissize040.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

Antenna, Sensor, and Communications Trunk Line Connections

Features ●Availableinalow-profile(GT3)andastandard(GT3B)type. ●Splittypeusesamountingscrewholediameterof2.6mm. ●Tabwidthissize040.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

GT3产品属性

  • 类型

    描述

  • 型号

    GT3

  • 制造商

    APEX TOOL GROUP

  • 功能描述

    HANDLE ONLY WITH TRIGGER AND AND 3-WIRE CORD FOR GT GUN

  • 制造商

    Apex Tool Group

  • 功能描述

    HANDLE W/TRIGGER & 3-WIRE CORD

更新时间:2024-10-31 23:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vek-onlin
20+
SOT-23
36800
原装优势主营型号-可开原型号增税票
SMSC
21+
QFP
5000
全新原装现货 价格优势
GENITOP原厂
2020+
SOP8-B
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
TOSHIBA/东芝
22+
SOT-263
100000
代理渠道/只做原装/可含税
TOSHIBA(东芝)
23+
NA/
8735
原厂直销,现货供应,账期支持!
GIANTEC
21+
UDFN8
1516
十年信誉,只做原装,有挂就有现货!
TOS
18+
TO-3PF
11
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA(东芝)
23+
TO3PN
6000
诚信服务,绝对原装原盘
FSC/ON
23+
原包装原封 □□
48000
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    GST5009MLF,全新原装当天发货或门市自取0755-82732291.

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