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型号	功能描述	生产厂家企业	LOGO
GT01	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT010N10TL	丝印代码：GT010N10；N-Channel Enhancement Mode Power MOSFET Description The GT010N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT010N10TLA	丝印代码：GT010N10；N-Channel Enhancement Mode Power MOSFET Description The GT010N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT010N10TT	丝印代码：GT010N10；N-Channel Enhancement Mode Power MOSFET Description The GT010N10TT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT011N03D5E	丝印代码：GT011N03；N-Channel Enhancement Mode Power MOSFET Description The GT011N03D5E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT011N03ME	丝印代码：GT011N03；N-Channel Enhancement Mode Power MOSFET Description The GT011N03ME uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT011N03TE	丝印代码：GT011N03；N-Channel Enhancement Mode Power MOSFET Description The GT011N03TE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT011N03TLE	丝印代码：GT011N03；N-Channel Enhancement Mode Power MOSFET Description The GT011N03TLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT013N04D5	丝印代码：GT013N04；N-Channel Enhancement Mode Power MOSFET Description The GT013N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT013N04D5C	丝印代码：GT013N04；N-Channel Enhancement Mode Power MOSFET Description The GT013N04D5C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT013N04D5CH	丝印代码：GT013N04H；N-Channel Enhancement Mode Power MOSFET Description The GT013N04D5CH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT013N04D5H	丝印代码：GT013N04H；N-Channel Enhancement Mode Power MOSFET Description The GT013N04D5H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT013N04TI	丝印代码：GT013N04I；N-Channel Enhancement Mode Power MOSFET Description The GT013N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT014N04TL	丝印代码：GT014N04；N-Channel Enhancement Mode Power MOSFET Description The GT014N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT015N06TL	丝印代码：GT015N06；N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT015N06TLA	丝印代码：GT015N06；N-Channel Enhancement Mode Power MOSFET Description The GT015N06TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT015N10TL	丝印代码：GT015N10；N-Channel Enhancement Mode Power MOSFET Description The GT015N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT015N10TLA	丝印代码：GT015N10；N-Channel Enhancement Mode Power MOSFET Description The GT015N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT016N10Q	丝印代码：GT016N10；N-Channel Enhancement Mode Power MOSFET Description The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT016N10TL	丝印代码：GT016N10；N-Channel Enhancement Mode Power MOSFET Description The GT016N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT016N10TLA	丝印代码：GT016N10；N-Channel Enhancement Mode Power MOSFET Description The GT016N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT017N04D5A	丝印代码：GT017N04；N-Channel Enhancement Mode Power MOSFET Description The GT017N04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT019N04D5	丝印代码：GT019N04；N-Channel Enhancement Mode Power MOSFET Description The GT019N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT019N04D5A	丝印代码：GT019N04；N-Channel Enhancement Mode Power MOSFET Description The GT019N04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT01_08	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT0100-17M000	包装：散装描述：HYBRID 17 STEP MOTOR LOW BACKLAS 电机，电磁阀，螺线管，驱动器板/模块步进电机	NMB 美蓓亚三美	NMB
GT0100-23M201	包装：散装描述：HYBRID 23 STEP MOTOR LOW BACKLAS 电机，电磁阀，螺线管，驱动器板/模块步进电机	NMB 美蓓亚三美	NMB
GT01060BQ	高压MOSFET	GIETSIC 绿能芯创	GIETSIC
GT010N10TT	100V N Channel SGT MOSFET	GOFORD 谷峰半导体	GOFORD
GT01-110-007	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-110-007	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-110-011	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-110-011	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-110-015	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-110-015	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-111-007	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-111-007	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-111-011	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-111-011	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-120-007	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-120-007	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-120-010	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-120-010	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-120-015	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-120-015	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-122-007	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-122-007	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-122-010	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-122-010	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-122-015	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-122-015	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-133-007	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-133-007	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-133-011	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT01-133-011	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-133-015	Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages	ICE	ICE
GT01-133-015	Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages	ICE	ICE
GT011N03D5E	30V N Channel SGT MOSFET	GOFORD 谷峰半导体	GOFORD
GT01-C100R4-25P	GRAPHIC OPERATION TERMINAL GOT SIMPLESeries 文件：7.19548 Mbytes Page：252 Pages	MITSUBISHI 三菱电机	MITSUBISHI

GT01产品属性

类型
描述
ID (A)：
10
RDS(typ) (mΩ)：
9.5
RDS(max) (mΩ)：
12
Vgs (V)：
44199
封装类型：
SOP8

GT01供应商更多...

更新时间：2026-5-22 18:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	GT015023	N/A	24+/25+		36	原装正品现货库存价优	询价
深圳市一线半导体有限公司	GT0100	NSC	24+	PLCC-44P	75		询价
深圳市昌和盛利电子有限公司	GT0100	NSC	26+	PLCC-44P	9823	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
芯有半导体（深圳）有限公司	GT0100	NS	02+/03+	PLCC44	207	全新原装100真实现货供应	询价
深圳市壹芯创科技有限公司	GT0100	NS	22+	PLCC44	2000	进口原装!现货库存	询价
深圳市橙椒科技有限公司	GT01-C30R2-6P	国产	25+		50000	原装品质,专业护航,省心采购,就选橙椒科技!	询价
现代芯城（深圳）科技有限公司	GT014N04TL		26+	N/A	69000	一级代理-主营优势-实惠价格-不悔选择	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

GT01产品属性

GT01供应商更多...

GT01芯片相关品牌

GT01规格书下载地址

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GT01数据表相关新闻

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DdatasheetPDF页码索引