位置：首页 > IC中文资料第8461页 > GT01
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GT01 | Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE |   | |
GT01 | Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | |
N-Channel Enhancement Mode Power MOSFET Description The GT010N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT010N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT010N10TT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT011N03D5E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT011N03ME uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT011N03TE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT011N03TLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT013N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT013N04D5C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT013N04D5CH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT013N04D5H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT013N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT014N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT015N06TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT015N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT015N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT016N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT016N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT017N04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT019N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT019N04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
包装：散装 描述：HYBRID 17 STEP MOTOR LOW BACKLAS 电机，电磁阀，螺线管，驱动器板/模块 步进电机 | NMB 美蓓亚三美 | | ||
包装：散装 描述：HYBRID 23 STEP MOTOR LOW BACKLAS 电机，电磁阀，螺线管，驱动器板/模块 步进电机 | NMB 美蓓亚三美 | | ||
1-Bit Bidirectional Voltage-Level Translator | GTIC 谷泰微 | | ||
高压MOSFET | GIETSIC 绿能芯创 | | ||
100V N Channel SGT MOSFET | GOFORD 谷峰半导体 | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：184.17 Kbytes Page：1 Pages | ICE | | ||
Gate Drive Transformer 文件：140.58 Kbytes Page：1 Pages | ICE | | ||
GRAPHIC OPERATION TERMINAL GOT SIMPLESeries 文件：7.19548 Mbytes Page：252 Pages | MITSUBISHI 三菱电机 | |
GT01产品属性
- 类型
描述
- 型号
GT01
- 制造商
ICE
- 制造商全称
ice Components, Ins.
- 功能描述
Gate Drive Transformer
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vek-onlin |
SOT-23 |
45000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NS |
02+/03+ |
PLCC44 |
207 |
全新原装100真实现货供应 |
|||
ICE |
2450+ |
SMD |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Vek-onlin |
2025+ |
SOT-23 |
7695 |
全新原厂原装产品、公司现货销售 |
|||
NSC |
26+ |
PLCC-44P |
9823 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NSC |
24+ |
PLCC-44P |
75 |
||||
Vek-onlin |
16+ |
SOT-23 |
45000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
NS |
22+ |
PLCC44 |
2000 |
进口原装!现货库存 |
|||
24+ |
SOP-8 |
2000 |
只做原装正品现货 欢迎来电查询15919825718 |
||||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
GT01规格书下载地址
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DdatasheetPDF页码索引
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