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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GSD2656 | N P N E P I T A X I A L T R A N S I S T O R 文件：139.43 Kbytes Page：2 Pages | ETL 亚历电子 |   | |
GSD2656 | NPN EPITAXIAL TRANSISTOR 文件：137.25 Kbytes Page：2 Pages | GTM 勤益投资控股 | | |
GSD2656 | N P N E P I T A X I A L T R A N S I S T O R | ETL 亚历电子 | | |
LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS | SAMSUNG 三星 | | ||
LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS | SAMSUNG 三星 | | ||
LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS | SAMSUNG 三星 | | ||
High power GaAIAs infrared LED Features ● High radiant output power ● High reliability Applications ● Optical switch ● Automatic control system | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Low-voltage avalanche regulator double diodes DESCRIPTION The PLVA2600A series consists of two high performance voltage regulator diodes with common anodes, in small SOT23 plastic SMD packages. The series consists of PLVA2650A to PLVA2668A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • | PHILIPS 飞利浦 | |
GSD2656产品属性
- 类型
描述
- 型号
GSD2656
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
NPN EPITAXIAL TRANSISTOR
GSD2656规格书下载地址
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GSD2656数据表相关新闻
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