HIGH LINEARITY POWER AMPLIFIER 3.3 to 4.2 GHz

FEATURES • Excellent OP1dB, OIP3, ACLR and IM3 Performance • Native Linearity Provides up to +23 dBm POUT with > 45 dBc ACLR – Without the Need for Digital Predistortion Correction • +23 dBm Linear Output Power Maintained at 85 °C • Flexible Biasing Provides Latitude for Linearity Optimizat

High Linearity Power AmplifierTuning Range: 3.3 to 4.2 GHz

High Linearity Power Amplifier\n\nTuning Range: 3.3 to 4.2 GHz\n\n\n\nThe GRF5536 is a high gain, two-stage InGaP HBT power amplifier designed to deliver excellent P1dB, ACLR and IM3 performance the 3.3 to 4.2 GHz band. Its exceptional native linearity makes it an ideal choice for transmitter applic Reference: 5.0V/197mA/3550MHz\n• Gain: 27.3 dB\n• OP1dB: 32 dBm\n• OIP3: 44.7 dBm @ 23 dBm Pout/tone\n• Noise Figure: 4.1 dB\n• Excellent OP1dB, OIP3, ACLR and IM3 Performance\n• Native Linearity Provides up to +23 dBm POUT with > 45dBc ACLR – Without the Need for Digital Predistortion Correction\n•;

HIGH LINEARITY POWER AMPLIFIER 3.3 to 4.2 GHz

FEATURES • Excellent OP1dB, OIP3, ACLR and IM3 Performance • Native Linearity Provides up to +23 dBm POUT with > 45 dBc ACLR – Without the Need for Digital Predistortion Correction • +23 dBm Linear Output Power Maintained at 105 °C • Flexible Biasing Provides Latitude for Linearity Optimiza

High Linearity Power AmplifierTuning Range: 3.3 to 4.2 GHz

High Linearity Power Amplifier\n\nTuning Range: 3.3 to 4.2 GHz\n\n\n\nThe GRF5536W is a high gain, two-stage InGaP HBT power amplifier designed to deliver excellent P1dB, ACLR and IM3 performance the 3.3 to 4.2 GHz band. Its exceptional native linearity makes it an ideal choice for transmitter appli Reference: 5.0V/195mA/3550MHz\n• Gain: 27.3 dB\n• OP1dB: 32 dBm\n• OIP3: 44.7 dBm @ 23 dBm Pout/tone\n• Noise Figure: 4.1 dB\n• Excellent OP1dB, OIP3, ACLR and IM3 Performance\n• Native Linearity Provides up to +23 dBm POUT with > 45dBc ACLR – Without the Need for Digital Predistortion Correction\n•;

SILICON PLANAR ZENER DIODES

Features Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request.

ZENER DIODE CHIPS

• 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/437 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING

Silicon Controlled Rectifier (SCR)

Description: The NTE5536 is a silicon controlled rectifier (SCR) in a TO220 type package designed for use as back–to–back SCR output devices for solid state relays or applications requiring high surge operation. Features: • 400A Surge Capability • 800V Blocking Voltage

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

Security & Chip Card ICs

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