Linear PAs

Reference: 5.0V/205mA/1960MHz\n• Gain: 25.5 dB\n• OP1dB: 32.5 dBm\n• OIP3: 47.5 dBm @ 23 dBm Pout/tone\n• Noise Figure: 3.9 dB\n• Flexible Bias Voltage and Current\n• Digital Shutdown\n• High Ruggedness\n• Process: InGaP HBT;

High Linearity Power Amplifier Tuning Range: 1.7 to 1.8 GHz

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ZENER DIODE CHIPS

• 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/437 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING

ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

0.7GHz to 1.4GHz High Linearity Upconverting Mixer

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Silicon Controlled Rectifier (SCR)

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