Linear PAs

Reference: 5.0V/225mA/1855MHz\n• Gain: 26.5 dB\n• OP1dB: 32.0 dBm\n• OIP3: 48.0 dBm @ 23 dBm Pout/tone\n• Noise Figure: 4.2 dB\n• Flexible Bias Voltage and Current\n• Digital Shutdown\n• High Ruggedness\n• Process: InGaP HBT;

High Linearity Power Amplifier Tuning Range: 1.7 to 1.8 GHz

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HIGH LINEARITY POWER AMPLIFIER 1.8 to 1.91 GHz

FEATURES Excellent OP1dB, OIP3, ACLR and IM3 Performance Native Linearity Provides up to +23 dBm POUT with > 45 dBc ACLR – Without the Need for Digital Predistortion Correction +23 dBm Linear Output Power Maintained at 105 °C Flexible Biasing Provides Latitude for Linearity Optimization 23

High Linearity Power AmplifierTuning Range: 1.8 to 1.91GHz

High Linearity Power Amplifier\n\nTuning Range: 1.8 to 1.91GHz\n\n\n\nThe GRF5518W is a high gain, two-stage InGaP HBT power amplifier designed to deliver excellent P1dB, ACLR and IM3 performance over the 1800 to 1910 MHz band. Its exceptional native linearity makes it an ideal choice for transmitte Reference: 5.0V/225mA/1855MHz\n• Gain: 27.0 dB\n• OP1dB: 32.0 dBm\n• OIP3: 45.0 dBm @ 23 dBm Pout/tone\n• Noise Figure: 4.2 dB\n• Excellent OP1dB, OIP3, ACLR and IM3 Performance\n• Native Linearity Provides up to +22.5 dBm POUT with > 45 dBc ACLR – Without the Need for Digital Predistortion Correcti;

SILICON PLANAR ZENER DIODES

Features Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request.

ZENER DIODE CHIPS

• 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/437 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING

ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

1.3 GHz bidirectional I2C-bus controlled synthesizer

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