HIGH GAIN, X-Band LNA 8 to 12 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 25 mA / 10 GHz Gain: 13.2 dB OIP3: 24 dBm OP1dB: 12.8 dBm Evaluation Board Noise Figure: 1.9 dB APPLICATIONS X-Band LNA Microwave Oscillator LO Buffer RFID Motion Detect

High Gain, Ultra-Low Noise Amplifier;8.0 to 13.0 GHz

The GRF2710 is a high gain, low noise, linear amplifier designed for high performance 8.0 to 13.0 GHz applications. Over this frequency range, it exhibits excellent gain and compression point.\r\n\r\n The device is operated from a single positive supply of 3.0 to 8.0 V with a typical bias conditi • Reference: 11.0 GHz; 5.0 volts/25 mA\r\n• Gain: 13.9 dB\r\n• OP1dB: 13.0 dBm\r\n• OIP3: 21.0 dBm\r\n• EVB Noise Figure: 2.1 dB\r\n• Internally Pre-Matched to 50 Ω\r\n• Process: GaAs pHEMT;

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages