BROADBAND LINEAR GAIN BLOCK 0.05 to 5 GHz

FEATURES Flexible Bias Internally Matched to 50 Ω Process: GaAs pHEMT Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 90 mA / 1.9 GHz Gain: 10.2 dB OIP3: 36 dBm OP1dB: 20 dBm EVB Noise Figure: 3.1 dB APPLICATIONS Systems Requiring Flat Gain Linear Driver Amplifier Small Cells

Linear Drivers

Reference: 5V/90mA/2000MHz\n• Gain: 10.5 dB\n• OIP3: 32.5 dBm\n• OP1dB: 20.5 dBm\n• NF: 3.1 dB\n• Flexible Bias\n• Internally Matched to 50 Ω\n• Process: GaAs pHEMT;

IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating : 60 Amperes peak

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound 2.0 ampere operation at TA=55 ¢J with no thermal runaway Exceeds environmental standards

PLASTIC SILICON RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES • Low cost • High current capability • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • 2.0 ampere operation at TA = 55°C with no thermal runawa

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers ... Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction

COMPENSATED PRESSURE SENSOR

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