High Frequency Gain Blocks

The GRF2003 is a broadband, low noise linear gain block designed for small cell, wireless infrastructure and other high performance RF applications. Internally matched to 50 ohms, it exhibits low NF, with good linearity and gain flatness over 0.05 to 10.0 GHz.(1)Due to its flexible biasing capabilit • Bandwidth: 0.05 to 10.0 GHz\n• Gain: 16.4 dB @ 2.0 GHz\n• Gain: 10.0 dB @ 10.0 GHz\n• OP1dB: +17.2 dBm @ 2.0 GHz\n• OP1dB: +9.0 dBm @ 10.0 GHz\n• OIP3: +31.0 dBm @ 2.0 GHz\n• NF: 2.4 dB @ 2.0 GHz\n• Flexible Bias Voltage and Current\n• Process: GaAs pHEMT;

Broadband Gain Block 0.1??0.0 GHz

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丝印代码：A3；Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

High Current/Voltage Darlington Drivers

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High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages