包装：散装 描述：GROMMET 1.000\ 电缆，电线 - 管理 衬套，索环

Hallogic Hall Effect Sensors Type OHN3119U, OHS3119U

Description: These Hall-effect devices contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic® silicon chip. Included on-chip is a band gap voltage regulator to allow operation with a wide rang

High Efficiency 2X Charge Pump

General Description The AAT3119 is a general purpose high efficiency voltage regulated charge pump IC that can produce output current levels up to 150mA. As a voltage regulated output device, it may be used for general voltage boost applications or to power white, RGB, or flash type LEDs from a 2

Hallogic Hall Effect Sensors Type OHN3119U, OHS3119U

Description: These Hall-effect devices contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic® silicon chip. Included on-chip is a band gap voltage regulator to allow operation with a wide rang

Hallogic Hall Effect Sensors Type OHN3119U, OHS3119U

Description: These Hall-effect devices contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic® silicon chip. Included on-chip is a band gap voltage regulator to allow operation with a wide rang

Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin plastic package. FEATURES ● TrenchMOS output stage ● Current limiting ● Overload protection ● Overtemperature protection ● Protection latched reset by input ● 5 V l