LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

Wiha Sockets

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LOW NOISE L TO K-BAND GaAs MESFET

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