| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL POWER MOSFETS FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability | SAMSUNG 三星 |   | ||
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
| MOTOROLA 摩托罗拉 | | ||
PIN PHOTODIODE Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw | UOT 东贝光电 | | ||
PIN PHOTODIODE Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw | UOT 东贝光电 | | ||
TO-220 8A Triac 文件：58.07 Kbytes Page：2 Pages | SANKEN 三垦 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF841 |
25+ |
31 |
31 |
||||
sam |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
IR |
23+ |
TO-263 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-263 |
7000 |
||||
HARR |
95+ |
TO220 |
11 |
只售原装正品 |
|||
sam |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
IR |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
|||
PHI |
23+ |
SOP3.9MM |
40000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
26+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IR |
23+24 |
TO-262 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
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2019-3-7
DdatasheetPDF页码索引
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