Medium Switching Plastic Rectifier

FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS  

MEDIUM-SWITCHING PLASTIC RECTIFIER

FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Construction utilizes void-free molded plastic technique ♦ High forward current operation ♦ Fast switching for high efficiency ♦ High temperature soldering guaranteed: 2

封装/外壳：DO-201AD，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 600V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单

DIODE GEN PURP 600V 3A DO201AD

UHF amplifier module

DESCRIPTION The BGY916 is a three-stage UHF amplifier module in a SOT365A package. It consists of one NPN silicon planar transistor die and two silicon MOS-FET dies mounted on a metallized ceramic AlN substrate, together with matching and bias circuitry. FEATURES • 26 V nominal supply voltage

Small Signal Diode

Small Signal Diode

Small Signal Diode

Small Signal Diode

16 WATT 925-960 MHz RF POWER AMPLIFIER

The RF Line UHF Silicon FET Power Amplifier Designed specifically for the European Digital Extended Group Special Mobile (GSM) Base Station applications in the 925–960 MHz frequency range. MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input power. • Specified 26 Vo

Integrated Circuit High Current, NPN Transistor Array, Common Emitter

Description: The NTE916 is a high current transistor array in a 16–Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a common–emitter configuration designed for directly driving seven–segment displays and light–emitting diodes (LED)