Dual Common-Cathode Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS     For use in high frequency rectifie

Dual Common Cathode Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max., 10 s per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com

GLASS PASSIVATED PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 16.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive centertap ♦ Glass passivated chip junctions ♦ Low power loss ♦ High surge capability ♦ Superfast

Dual Common Cathode Ultrafast Rectifier

Power pack\nGlass passivated pellet chip junction\nUltrafast recovery time;

Dual Common Cathode Ultrafast Rectifier

分立 ·Power pack\n·Glass passivated pellet chip junction\n·Ultrafast recovery time;

Dual Common Cathode Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max., 10 s per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com

Ultrafast Rectifier Diode

FEATURES · Low Switching Losses, High Efficiency · Ultra Fast Recovery Time · High Forward Surge Capability APPLICATIONS · Switching Mode Power Supplies · Freewheeling Diode · Inverters

Dual Common-Cathode Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS     For use in high frequency rectifie

Ultrafast Rectifier

FEATURES · Ultrafast Recovery Time · Low Switching Losses, High Efficiency · High Forward Surge Capability APPLICATIONS · Switching Mode Power Supplies · Converters · Free Wheeling Diodes

Dual Common-Cathode Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS     For use in high frequency rectifie

封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY GP 50V 16A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY GP 50V 16A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

2.4 GHz DOWNCONVERTER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2401 is a GaAs low–noise amplifier and downmixer in a low–cost 16 lead plastic package designed for use in the 2.4 to 2.5 GHz Industrial– Scientific–Medical (ISM) band. The design is optimized for efficiency at 5.0 Volt operation at 2.45 GHz but is usable from 2.0 to 3.0 GHz in applicatio

Silicon PNP Transistor RF Stages in FM Front Ends

Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Base-coupled transistors) • Reduction of the mounting area and assembly cost by one half

FAMILY OF 900-nA/Ch RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH REVERSE BATTERY PROTECTION

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