Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS     For use in

Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max., 10 s per JESD 22-B106 • Material categorization: for definitions of compliance pl

Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max., 10 s per JESD 22-B106 • Material categorization: for definitions of compliance pl

FAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ Low power loss ♦ Low leakage current ♦ High surge capability ♦ Superfast recovery time for high efficie

Ultrafast Plastic Rectifier

Power pack\nGlass passivated pellet chip junction\nUltrafast recovery time;

封装/外壳：TO-220-2 包装：带盒（TB） 描述：DIODE GEN PURP 100V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE GEN PURP 100V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

Integtrated Circuit Electronic Channel Selector

Description The NTE1402 is an integrated circuit in a 24–Lead DIP type package designed for electronic tuner by the preset volume method. Features • Simplifies Selection Circuit up to 16 Channels • Incorporating Clock Oscillator, Input Control, UP–DOWN Counter and Decoder Circuit

Integrated Photosensors

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