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型号	功能描述	生产厂家企业	LOGO
GFC9014	P Channel Power MOSFET 文件：119.35 Kbytes Page：1 Pages	GSG 劲力半导体	GSG
GFC9014	P Channel Power MOSFET	GSG 劲力半导体	GSG
9014	NPN SILICON TRANSISTOR FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V	WINGS 永盛电子	WINGS
HN9014	NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications????????? NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications	SEMTECH 先之科	SEMTECH
S9014	Pre-Amplifier, Low Level & Low Noise Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015	FAIRCHILD 仙童半导体	FAIRCHILD
SFM9014	Advanced Power MOSFET FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Lower RDS(ON) : 0.362 Ω (Typ.)	FAIRCHILD 仙童半导体	FAIRCHILD
SS9014D	Pre-Amplifier, Low Level & Low Noise Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015	FAIRCHILD 仙童半导体	FAIRCHILD