GES5811晶体管资料

  • GES5811别名:GES5811三极管、GES5811晶体管、GES5811晶体三极管

  • GES5811生产厂家

  • GES5811制作材料:Si-N/P

  • GES5811性质:低频或音频放大 (LF)_TR

  • GES5811封装形式:直插封装

  • GES5811极限工作电压:35V

  • GES5811最大电流允许值:0.75A

  • GES5811最大工作频率:>100MHZ

  • GES5811引脚数:3

  • GES5811最大耗散功率:0.5W

  • GES5811放大倍数:β>60

  • GES5811图片代号:A-20

  • GES5811vtest:35

  • GES5811htest:100000000

  • GES5811atest:0.75

  • GES5811wtest:0.5

  • GES5811代换 GES5811用什么型号代替:2N5810,2N5811,2N5812,2N5813,2N5814,2N5815,2N5816,2N5817,2N5818,2N5819,2N5820,2N5821,2N5822,2N5823,

型号 功能描述 生产厂家 企业 LOGO 操作

Small Signal Transistors

文件:54.29 Kbytes Page:1 Pages

Central

Small Signal Transistors

Central

BiMOS II 12-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS

Designed primarily for use with vacuum-fluorescent displays, the UCN5811A smart power BiMOS II driver features low-output saturation voltages and high output switching speed. These devices contain CMOS shift registers, data latches, and control circuitry, and bipolar high-speed sourcing outputs wi

ALLEGRO

VM-1 Application Board 3

文件:409.69 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier

文件:672.48 Kbytes Page:28 Pages

AD

亚德诺

High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier

文件:672.48 Kbytes Page:28 Pages

AD

亚德诺

60V, LINEAR 75mA ADJUSTABLE CURRENT LED DRIVER

文件:432.99 Kbytes Page:14 Pages

DIODES

美台半导体

GES5811产品属性

  • 类型

    描述

  • 型号

    GES5811

  • 功能描述

    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 750MA I(C) | TO-92

更新时间:2025-12-29 17:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MSV/萌盛微
24+
NA/
13250
原装现货,当天可交货,原型号开票
Bychip/百域芯
21+
DFN0603
30000
优势供应 品质保障 可开13点发票
NQRTEL
24+
QFP
13718
只做原装 公司现货库存
A
24+
b
6
TE/泰科
2508+
/
320680
一级代理,原装现货
PANDUIT
8
全新原装 货期两周
IBM
23+
BGA
98900
原厂原装正品现货!!
INFINEON
23+
8000
只做原装现货
PANDUITCORPORATION
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
PANDUIT CORP
5

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