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GES5551

SILICON TRANSISTORS

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ETCList of Unclassifed Manufacturers

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GES5551

Silicon Transistors

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

GES5551

Trans GP BJT NPN 70V 0.8A 3-Pin TO-92

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

GES5551产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    70V

  • Maximum Collector Emitter Saturation Voltage:

    0.15@10mA@100mA

  • Maximum Collector Emitter Voltage:

    70V

  • Maximum DC Collector Current:

    0.8A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    625mW

  • Maximum Transition Frequency:

    335MHz

  • Type:

    NPN

更新时间:2026-5-14 21:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IBM
26+
BGA
99680
只做原装,欢迎来电资询
IBM
26+
BGA
20000
公司只有正品,实单来谈
TI
25+
TO-92
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
IBM
23+
BGA
98900
原厂原装正品现货!!
高特
21+
DFN1006
185
只做原装鄙视假货15118075546
Bychip/百域芯
21+
DFN0603
30000
优势供应 品质保障 可开13点发票
A
24+
b
6
IBM
25+
BGA
18000
原装正品,全新来谈
TE/泰科
2608+
/
320680
一级代理,原装现货
TI
25+
TO-92
7734
样件支持,可原厂排单订货!

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