N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage application such as

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

General Description This device employs advanced MOSFET technology and features low gate charge while maintaining low on resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

30V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 60A, 30V. RDS(on)= 0.0135Ω@VGS= 10 V • Low gate charge ( typical 18.5 nC) • Low Crss ( typical 155 pF) • Fa

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

N-Channel Logic Level PWM Optimized Power MOSFET

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