位置：首页 > IC中文资料第5704页 > GE50L02
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GE50L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GE50L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converte | GTM 勤益投资控股 |   | |
GE50L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM 勤益投资控股 | | |
GE50L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：262.27 Kbytes Page：5 Pages | ETL 亚历电子 | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited f | A-POWER 富鼎先进电子 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited f | A-POWER 富鼎先进电子 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：250.06 Kbytes Page：5 Pages | GTM 勤益投资控股 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：286.1 Kbytes Page：5 Pages | GTM 勤益投资控股 | |
GE50L02产品属性
- 类型
描述
- 型号
GE50L02
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE50L02规格书下载地址
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