型号 功能描述 生产厂家 企业 LOGO 操作

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

Intel

英特尔

封装/外壳:46-VFBGA 包装:管件 描述:IC FLASH 16MBIT PARALLEL 46VFBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 16M PARALLEL 46VFBGA

Micron

美光

3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

FLASH MEMORY

GENERAL DESCRIPTION The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O

Micron

美光

16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

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16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

????????????旺宏电子

GE28F160C3T产品属性

  • 类型

    描述

  • 型号

    GE28F160C3T

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    Advanced+ Boot Block Flash Memory(C3)

更新时间:2025-11-5 13:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL
25+
SOP
1000
原装正品,假一罚十!
INTEL
01+
BGA
100
原装现货海量库存欢迎咨询
INTEL
24+
BGA
1068
原装现货假一罚十
INTEL/英特尔
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
INTEL/英特尔
2407+
BGA
7750
原装现货!实单直说!特价!
Micron Technology Inc.
21+
208-LFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
INTEL
04+
BGA
106
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持
INTEL/英特尔
23+
BGA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
PB
25+
QFP
3200
全新原装、诚信经营、公司现货销售

GE28F160C3T数据表相关新闻