型号 功能描述 生产厂家 企业 LOGO 操作

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

FLASH MEMORY

GENERAL DESCRIPTION The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O

Micron

美光

16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

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16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

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GE28F160C3B产品属性

  • 类型

    描述

  • 型号

    GE28F160C3B

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    Advanced+ Boot Block Flash Memory(C3)

更新时间:2025-11-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL/英特尔
24+
NA/
2000
优势代理渠道,原装正品,可全系列订货开增值税票
INTEL
25+
BGA
2000
原装正品,假一罚十!
原装INTEL
09+
BGA64
245
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INTEL/英特尔
24+
BGA48
7850
只做原装正品现货或订货假一赔十!
INTEL/英特尔
07+
BGA
2839
原装现货支持BOM配单服务
INTEL
23+
BGA
42574
##公司主营品牌长期供应100%原装现货可含税提供技术
INTEL
24+
BGA
30617
主打INTEL品牌价格绝对优势
原装INTEL
23+
BGA64
30000
代理全新原装现货,价格优势
INTEL/英特尔
25+
NA
880000
明嘉莱只做原装正品现货
INTEL
BGA
2000
正品原装--自家现货-实单可谈

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