位置:首页 > IC中文资料第6823页 > GE28F160C3B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible  | Intel 英特尔  | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible  | Intel 英特尔  | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible  | Intel 英特尔  | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible  | Intel 英特尔  | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible  | Intel 英特尔  | |||
3 Volt Intel Advanced Boot Block Flash Memory Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit  | Intel 英特尔  | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible  | Intel 英特尔  | |||
FLASH MEMORY GENERAL DESCRIPTION The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O  | Micron 美光  | |||
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 文件:417.03 Kbytes Page:44 Pages  | MCNIX ????????????旺宏电子  | |||
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 文件:417.03 Kbytes Page:44 Pages  | MCNIX ????????????旺宏电子  | 
GE28F160C3B产品属性
- 类型
描述
 - 型号
GE28F160C3B
 - 制造商
INTEL
 - 制造商全称
Intel Corporation
 - 功能描述
Advanced+ Boot Block Flash Memory(C3)
 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
INTEL/英特尔  | 
24+  | 
NA/  | 
2000  | 
优势代理渠道,原装正品,可全系列订货开增值税票  | 
|||
INTEL  | 
25+  | 
BGA  | 
2000  | 
原装正品,假一罚十!  | 
|||
原装INTEL  | 
09+  | 
BGA64  | 
245  | 
一级代理,专注军工、汽车、医疗、工业、新能源、电力  | 
|||
INTEL/英特尔  | 
24+  | 
BGA48  | 
7850  | 
只做原装正品现货或订货假一赔十!  | 
|||
INTEL/英特尔  | 
07+  | 
BGA  | 
2839  | 
原装现货支持BOM配单服务  | 
|||
INTEL  | 
23+  | 
BGA  | 
42574  | 
##公司主营品牌长期供应100%原装现货可含税提供技术  | 
|||
INTEL  | 
24+  | 
BGA  | 
30617  | 
主打INTEL品牌价格绝对优势  | 
|||
原装INTEL  | 
23+  | 
BGA64  | 
30000  | 
代理全新原装现货,价格优势  | 
|||
INTEL/英特尔  | 
25+  | 
NA  | 
880000  | 
明嘉莱只做原装正品现货  | 
|||
INTEL  | 
BGA  | 
2000  | 
正品原装--自家现货-实单可谈  | 
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GE28F160C3B规格书下载地址
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DdatasheetPDF页码索引
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