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GE1002晶体管资料

  • GE10020...10023别名:GE10020...10023三极管、GE10020...10023晶体管、GE10020...10023晶体三极管

  • GE10020...10023生产厂家

  • GE10020...10023制作材料:Si-N+Darl+Di

  • GE10020...10023性质:低频或音频放大 (LF)

  • GE10020...10023封装形式:直插封装

  • GE10020...10023极限工作电压:300V

  • GE10020...10023最大电流允许值:60A

  • GE10020...10023最大工作频率:<1MHZ或未知

  • GE10020...10023引脚数:2

  • GE10020...10023最大耗散功率:250W

  • GE10020...10023放大倍数:β>75

  • GE10020...10023图片代号:E-44

  • GE10020...10023vtest:300

  • GE10020...10023htest:999900

  • GE10020...10023atest:60

  • GE10020...10023wtest:250

  • GE10020...10023代换 GE10020...10023用什么型号代替:MJ10020,MJ10021,MJ10022,MJ10023,

型号 功能描述 生产厂家 企业 LOGO 操作

Darlington Power Transistors

Bipolar Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Darlington Power Transistors

Bipolar Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Darlington Power Transistors

Bipolar Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Darlington Power Transistors

Bipolar Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

PANJIT

強茂

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MOTOROLA

摩托罗拉

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp

NTE

GE1002产品属性

  • 类型

    描述

  • 型号

    GE1002

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2026-5-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
TO-204AE
12369
样件支持,可原厂排单订货!
TI
25+
TO-204AE
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
HARRIS/哈里斯
23+
TO-3
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择

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